4 edition of Proceedings of the 1996 Bipolar/BiCMOS Circuits and Technology Meeting found in the catalog.
Published
1996
by Institute of Electrical and Electronics Engineers, IEEE Service Center in [New York, N.Y.], Piscataway, N.J
.
Written in English
Edition Notes
| Other titles | 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting., Proceedings of the 1996 Bipolar/BiCMOS Circuits and Technology Meeting., IEEE Bipolar/BiCMOS Circuits and Technology Meeting., Bipolar/BiCMOS Circuits and Technology Meeting, 1996, proceedings of the 1996. |
| Statement | sponsored by IEEE Electron Devices Society ; in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section. |
| Genre | Congresses. |
| Contributions | IEEE Electron Devices Society., IEEE Circuits and Systems Society., Institute of Electrical and Electronics Engineers. Twin Cities Section. |
| The Physical Object | |
|---|---|
| Pagination | 228 p. : |
| Number of Pages | 228 |
| ID Numbers | |
| Open Library | OL20524701M |
| ISBN 10 | 0780335171, 0780335163, 078033518X |
| OCLC/WorldCa | 35987080 |
An S-parameter technique for substrate resistance characterization of RF bipolar transistors - Bipolar/BiCMOS Circuits and Technology Meeting, 2 Proceedings of the Author. Laleh Rabieirad, E. Martinez and Saeed Mohammadi, “An integration technology for RF and microwave circuits based on interconnect programming,” IEEE trans. on .
J. Crols, P. Kinget, J. Craninckx and M. Steyaert, "An Analytical Model for Planar Inductors on Lowly Doped Silicon Substrates for High Frequency Analog Design up to 3 GHz", IEEE Symposium on VLSI Circuits, pp. , June S. Pendharkar, ``Technology requirements for automotive electronics,'' in Proceedings IEEE Conference Vehicle Power and Propulsion, pp. , 9 J.-M. Park, H. Enichlmair, and R. Minixhofer, ``Hot-carrier behaviour of a m high-voltage n-channel LDMOS transistor,'' in Proceedings Simulation of Semiconductor Processes and Devices.
A parallel code for lifetime simulations in hadron storage rings in the presence of parasitic beam-beam interactions. Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE makethemworkforyou.com by: A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance Author: Dong Wang, Jian Luan, Xuan Guo, Lei Zhou, Danyu Wu, Huasen Liu, Hao Ding, Jin Wu, Xinyu Liu.
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Bipolar/BiCMOS Circuits and Technology Meeting,proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting IEEE Bipolar/BiCMOS Circuits and Technology Meeting: Responsibility: sponsored by IEEE Electron Devices Society ; in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section.
Get this from a library. Bipolar/BiCMOS Circuits and Technology Meeting,Proceedings of the [Institute of Electrical and Electronics Engineers;]. Title IEEE Bipolar/BiCMOS Circuits and Technology Meeting Desc:Proceedings of a meeting held OctoberMonterey, California.
Prod#:CFP08BIP-CDR ISBN Pages:0 Format:CD-ROM Notes: Authorized distributor of all IEEE proceedings Publ:Institute of Electrical and Electronics Engineers (IEEE) POD Publ:Curran Associates, Inc.
(Jan ). Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. Country: United States - SIR Ranking of United States: H Index. Subject Area and Category: Engineering Electrical and Electronic Engineering: Publisher: Publication type: Conferences and Proceedings: ISSN:, Coverage:ongoing.
Best Student Paper Award, P.K. Saha, D. Howard, S. Shankar and J.D. Cressler, “An Adaptive, Wideband SiGe Image Reject Mixer for a Self-healing Receiver,” Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.
D.M. Richey and J.D. Cressler, "Scaling Issues and Ge Profile Optimization in Advanced UHV/CVD SiGe HBTs," Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp.October Bipolar Circuits and Technology Meeting, Portland.
30 likes. The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) is a forum for technical communication focused on. Austin, Texas, USA October IEEE Catalog Number: ISBN: CFP10BIP-PRT IEEE Bipolar/BiCMOS Circuits and Technology Meeting. It is with great pleasure that we invite you to be a part of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
After 39 years of the Compound Semiconductor IC Symposium (CSICS), and 32 years of the Bipolar/BiCMOS Circuit and Technology Meeting (BCTM), and after a successful debut in San Diego.
Title: Publisher: Begin Year: End Year: Source: Background: JSTOR: IITK: Background on World Politics: JSTOR: IITK: Bailliere's Clinical. Institute of Electrical and Electronics Engineers IEEE Solutions.
Below are Chegg supported textbooks by Institute of Electrical and Electronics Engineers IEEE. Select a textbook to see worked-out Solutions. IEEE Bipolar/BICMOS Circuits and Technology Meeting Proceedings 0th Edition 0.
Title: A Scalable High Frequency Noise Model for Bipolar Transistors with Appli cation to Optimal Transistor - Bipolar/BiCMOS Circuits and Technology Me eting,Proceedings of the Conference Publications.
C K. Xu, Y.-C. Lin, J. Robinson, D. Guzman, A. Strahan, A. Seabaugh, and S. Fullerton-Shirey, “Millisecond pulse dynamics of. The undesired influence of the substrate on circuit performance cannot be neglected for many advanced high-speed and RF circuits and must therefore be modelled correctly already in the design phase.
ieee bipolar / bicmos circuits and technology meeting makethemworkforyou.com radisson hotel & suites austin, texas, usa october 5 – 6, short course — october 4, sponsored by the electron devices society of the institute of electrical and electronic engineers in. P.G. Drennan, Diffused resistor mismatch modeling and characterization, in Bipolar/BiCMOS Circuits and Technology Meeting (), pp.
27–30 Google Scholar K.R. Lakshmikumar, R.A. Hadaway, M.A. Copeland, Characterization and modeling of mismatch. Transistor noise in SiGe HBT RF technology. Bipolar/BiCMOS Circuits and Technology Meeting, In this book we will present the reader some insight into the nonlinear behavior of the.
Lie has been serving on the Executive Committee of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), IEEE SiRF, IEEE MWSCAS, IEEE TSWMCS, and also serving on various Technical Program Committees (TPCs) for IEEE RFIC Symp., IEEE VLSI-DAT, IEEE ISCAS, IEEE PAWR, IEEE-NIH LiSSA, IEEE BIOCAS, etc.
Lie has been awarded with the US. “A – GHz Low-Power Image-Reject Downconverter in SiGe Technology,” in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, (Minneapolis), pp. Author: W. Simbürger, D. Kehrer, A. Heinz, H.D. Wohlmuth, M. Rest, K. Aufinger, A.L.
Scholtz. Title: Advanced Modelling Of Distortion Effects In Bipolar Transistors Using Th e Mextram Model - Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the. P. Bhattacharya, W.D. Zhou, J.
Sabarinathan, "Photonic Bandgap Microcavity Surface Emitting Electroluminescence Light Source" (Invited), STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXV at the Joint Meeting the th Meeting of The Electrochemical Society, and the 52nd Meeting of International Society of Electrochemistry, September.View Rob Groves’ profile on LinkedIn, the world's largest professional community.
Bipolar/BiCMOS Circuits and Technology Meeting October 10, Proceedings of the Bipolar/BiCMOS Title: Senior Device Modeling Engineer.
devices in electronics as they are currently used in integrated circuits. Includes high-level conditions as encountered in. Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting September, Oct 1,Technology & Engineering, pages.
